| 摘要 |
PROBLEM TO BE SOLVED: To obtain a highly conductive oxide material composed of a double oxide expressed by a specific formula and having rutile-type crystal structure. SOLUTION: High-purity In2 O3 powder and Sb2 O3 powder having an average particle diameter of <=1μm are mixed with each other at a molar ratio of 1/1 in wet state with a ball mill, etc., and the mixture is dried, calcined at about 500-1,000C deg., crushed, kneaded with a binder such as PVA, formed and baked in air at about 700-1,300 deg.C to obtain a double oxide having a rutile-type crystal structure and expressed by M1-x SbO4 [M is In or Ga; -0.1<=x<=0.1] such as InSbO4 . The double oxide is doped with 0.01-20atom% of one or more elements selected from the group IV metal elements such as Sn, Ti, Zr, Si or Ge to obtain the objective electrically conductive transparent oxide.
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