| 摘要 |
FIELD: semiconductor engineering. SUBSTANCE: semiconductor material has porous matrix incorporating antimony oxide, tin oxide (IV), and aluminum oxide (III). Metal palladium is attached to walls of matrix pores; mentioned ingredients are taken in following proportion, parts by mass: tin oxide (IV) - 100; antimony oxide (IV or III-V) - 0.03-0.95; aluminum oxide (III) - 0.6-3.4; metal palladium - 0.03-5.0. Mentioned material manufacturing technique includes joint deposition of tin and antimony hydroxides from mixture of aqueous solutions of their salts, heat treatment of sediment until solid solution of antimony oxide in tin oxide is obtained, dispersion of mentioned solid solution together with aluminum oxide powder in aqueous solution of carboxymethyl cellulose, slurry drying, and its baking to obtain porous layer on insulating substrate. Porous layer obtained is impregnated with aqueous solution of bivalent palladium salt, dried out, and calcined until salt taken is decomposed and metal palladium microparticles are settled down. EFFECT: improved material for manufacturing high-speed and stable sensors responding to acetone and its closest homolog vapors in air breathed out by human beings and diagnosing coma and ketoacidosis-induced precoma. 5 cl, 1 dwg, 3 tblt
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