| 摘要 |
PROBLEM TO BE SOLVED: To enable lowering of the normal directional voltage VF, without increasing the reverse directional current IR. SOLUTION: A first N type epitaxial layer 2a is formed on an N<++> type silicon substrate 1, and then phosphorus is evaporated and diffused on the central surface part of the first epitaxial layer 2a to form an N<+> type heavily doped region 3, successively forming a second N type epitaxial layer 2b on the first epitaxial layer 2a including the heavily doped region 3. Later, a P type guard ring layer is formed for the formation of a Schottky metal so as to joint with the second epitaxial layer 2b. |
