| 摘要 |
PROBLEM TO BE SOLVED: To obtain a transparent conductive film consisting mainly of an In oxide containing Ge and having a specific high visible light transmittance and a low electric resistance. SOLUTION: This transparent conductive film consisting mainly of an In2 O3 containing Ge and to be formed on a substrate is obtained by placing the substrate in a spattering device, disposing a target, for example, a composite target obtained by disposing a Ge chip on an In2 O3 target, heating the substrate in an inert gas atmosphere containing oxygen, applying an electric field between the substrate and the composite target in the heated state. Thus, the high transmittance transparent conductive film having a visible light transmittance of >=90% and suitable for the transparent electrodes of thin film transistor type liquid crystal displays is obtained. Even when the film is formed under a condition comprising a film-forming temperature of <=250 deg.C, the transparent conductive film having an electric resistance of <=1×10<-2>Ωcm and a visible light transmittance of >=90% is obtained.
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