| 摘要 |
PURPOSE: A method for manufacturing a storage electrode of a semiconductor device is to prevent residual substance on an upper portion of a cylinder type storage electrode or breaking of the same, thereby improving electric characteristics and reliability of the device. CONSTITUTION: An interlayer dielectric(22) having a contact plug(23) for a storage electrode is formed on a semiconductor substrate(21). The first conductive layer(24) is formed on the interlayer dielectric. On the first conductive layer is formed a sacrificial insulating layer(25) twice wherein thin films as insulating layers have different etching selectivity. An anti-reflection coating is formed on the sacrificial insulating layer. Using a mask of storage electrode as an etching mask, which protects a portion to be a storage electrode, the anti-reflection coating, the sacrificial insulating layer and the first conductive layer are formed. The second conductive layer is formed on the entire structure, and then over-etched to form a spacer of the second conductive layer in contact with the first conductive layer, thereby forming cylinder type storage electrode while removing the anti-reflection coating. The sacrificial insulating layer is then removed.
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