发明名称 |
Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same |
摘要 |
The present invention can provide an abrasive composition for polishing a semiconductor device which composition contains water, microparticles of an abrasive, and a chelating agent, wherein the abrasive is cerium oxide; the microparticles of cerium oxide have an average particle size of 0.01-1.0 mum and which composition is used for suitably forming a shallow trench isolation structure in a well-controlled manner during planarization of a semiconductor device including element-isolated structure. The invention also provides a method for producing the semiconductor device by use of the abrasive composition.
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申请公布号 |
US2002059755(A1) |
申请公布日期 |
2002.05.23 |
申请号 |
US20010832793 |
申请日期 |
2001.04.12 |
申请人 |
KIDO TAKANORI;TSUJINO FUMIO |
发明人 |
KIDO TAKANORI;TSUJINO FUMIO |
分类号 |
C09C1/68;C09G1/02;C09K3/14;H01L21/3105;H01L21/762;(IPC1-7):C09C1/68 |
主分类号 |
C09C1/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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