| 摘要 |
PROBLEM TO BE SOLVED: To realize growth with a good crystallinity even at a high growth speed by allowing supplied gases to appropriately react on a growth surface. SOLUTION: In a first process, the pressure in the inside of a quartz reaction tube 6 is reduced to 6.65×10<3> to 1.33×10<4> Pa by using an exhaust system, and a single crystal is grown on the surface of an SiC seed crystal 2 at a growth rate of <=0.5 mm/h. Thereby a single crystal having a dislocation density of <=1×10<5> cm<2> can be grown. In a subsequent second process, after the growth of the single crystal has been stabilized, and temperature of the surface of the growing crystal is raised to a temperature of >=2,500 deg.C which is higher by 100 deg.C or more than that at the first process, and the temperature of a powdery SiC raw material 3 is raised to a temperature higher by 200 deg.C or more than that of the surface of the growing crystal. As just described, at the initial stage of growth, a good single crystal is grown in the first process, and thereafter the single crystal is further grown at a higher growth speed in the second process.
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