发明名称 |
Selective epitaxy to reduce gate/gate dielectric interface roughness |
摘要 |
Channel carrier mobility is increased by reducing gate/gate dielectric interface roughness, thereby reducing surface scattering. Embodiments include depositing a layer of silicon by selective epitaxy prior to gate oxide formation to provide a substantially atomically smooth surface resulting in a smoother interface between the gate polysilicon and silicon oxide after oxidation.
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申请公布号 |
US6548335(B1) |
申请公布日期 |
2003.04.15 |
申请号 |
US20000651891 |
申请日期 |
2000.08.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUSTER CARL ROBERT;RICCOBENE CONCETTA;LUNING SCOTT |
分类号 |
H01L21/28;H01L21/336;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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