| 摘要 |
PROBLEM TO BE SOLVED: To provide a higher etching rate than a conventional parallel flat RIE using capacitive coupling plasma. SOLUTION: Etching gas is introduced into a reaction container where a transparent conductive thin film which is mainly constituted of indium oxide of a material to be etched is etched. High frequency power is applied to an antenna disposed outside the reaction container. Inductively coupled plasma is generated in the reaction container by electromagnetic induction through a dielectric window constituted of a dielectric plate disposed in the reaction container, low frequency power in a degree for generating bias potential is applied to the electrode on which the material to be etched is placed, and dry etching is performed. Etching gas includes 5 to 100 vol.% of hydrogen iodide gas and 0 to 95 vol.% of one type selected from the group of inert gas constituted of helium, neon, argon and krypton.
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