| 摘要 |
A semiconductor device comprises a gate insulating film formed on a semiconductor substrate, a layer insulting film formed over the gate insulating film and provided with an opening, and a gate electrode formed on the gate insulating film in the opening of the interlayer insulating film. The gate electrode has a metal film, and a poly-Si film formed on the side surfaces of the metal film. The poly-Si film coating the side surfaces of the metal film reduces stresses that may be induced in the interlayer insulating film and the metal film. |
