| 摘要 |
A method of gap-filling a bit line of a semiconductor device is provided to fill a space between bit lines without a void by controlling a gas supply ratio and forming an uniform seed layer. A bit line is formed on an upper surface of a semiconductor substrate(100). An O3TEOS seed layer(140) is formed on the entire surface of the semiconductor substrate. An O3TEOS gap-fill oxide layer(150) is formed on the O3TEOS seed layer. An O3TEOS capping oxide layer(160) is formed on the O3TEOS gap-fill oxide layer. The O3TEOS seed layer is formed under conditions including a temperature 540 degrees centigrade, a ratio of O3 gas to TEOS gas of 500:1, and a gap between the semiconductor substrate and a gas nozzle of 300 to 350mm.
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