| 摘要 |
<p>1358612 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 9 March 1972 [28 April 1971] 10900/72 Heading H1K A monolithic semi-conductor device is made by introducing two donor (acceptor) impurities with different diffusion rates into one or more areas of a surface of a P(N)-type wafer then epitaxially depositing P(N)-type material over the surface and heating to form regions of N(P)- type extending to new surface by out-diffusion of the faster diffusing impurity, and finally introducing impurities from the surface to form a bipolar transistor within the or one of the thus formed regions and a field effect transistor outside the regions or in another of them. There are FETs in both positions in the Fig. 6 embodiment which is made on a 100 orientated 10-20 ohm cm. P-type silicon wafer into which the donors phosphorus and arsenic are introduced by capsule diffusion before deposition of a 2 ohm cm. P-type silicon layer. After out-diffusion is completed boron is diffused in through oxide masking to form the base and the source and drain regions of the bipolar transistor 16 and P channel FET 19 respectively, and then after remasking arsenic is diffused in to form the bipolar transistor emitter and the source and drain of the N channel FET. Finally the oxide is removed from the gate sites and replaced by a thinner layer covered with phosphosilicate glass to form a charge stabilized gate insulation and electrodes provided in conventional matter. Details are given of the diffusion and masking steps. Specification 1,306,817 is referred to.</p> |
