| 摘要 |
<p>PURPOSE:To obtain a efficient wafer through a simple process by a method wherein a thin intermediate layer containing composing elements of both a substrate and a compound semiconductor is formed between semiconductor substrate and a compound semiconductor epitaxial growth layer. CONSTITUTION:By collision of particles of semiconductor compound material against a semiconductor substrate 2 by ion beam evaporation method or cluster ion beam evaporation method, the first intermediate layer Em-1 which consists of a mixture of both composing elements of the semiconductor substrate 2 and composing elements of a compound semiconductor is formed to get to a thickness of 500nm or less. Futhermore by the continuation of the evaporation process above described, the first compound semiconductor epitaxial growth layer E1 is formed on the first intermediate layer Em-1. Next thereto by the same procedure being repeated, the second compound semiconductor layer E2 is formed on the first compound semiconductor layer E1 putting the second intermediate layer Em-2 between the first semiconductor layer E1 and the second compound semiconductor layer E2. The second intermediate layer Em-2 may be omissible in some case.</p> |
