发明名称 CONTROLLER FOR GATE OF VERNIER CONTROLLING SEMICONDUCTOR SWITCH
摘要 <p>PURPOSE:To smooth change-over by a mechanism wherein thyristors ON-OFF controlled taking time lag at a half-period of an AC power source are operated after a discriminator deciding the saturation of a thyristor, whose phase is controlled, generates output. CONSTITUTION:When a motor M is driven by means of a thyristor device Th1, whose phase is controlled, and thyristor devices Th2, Th3 ON-OFF controlled, the lapping of the reference pulses of a reference pulse generating circuit BP and output from a phase shifter PS is detected by means of a comparator CD, and the reaching of the output from the phase shifter PS to the maximum flow rate is memorized to a memory circuit alphaM. The memorized output is added to an ON-OFF instruction circuit CE, and the thyristor device Th1 is closed through the phase shifter PS while the thyristor devices Th2, Th3 ON-OFF controlled are worked through delay circuits TD1, TD2. Thus, overshoot, etc. in case of change-over can be eliminated, and the transient variation of the currents of the motor can be prevented.</p>
申请公布号 JPS5649677(A) 申请公布日期 1981.05.06
申请号 JP19800129295 申请日期 1980.09.19
申请人 HITACHI LTD 发明人 SATOU HIROSHI
分类号 H02M7/19;B60L9/12;H02M1/08;H02M7/12;H02P7/292 主分类号 H02M7/19
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