发明名称 SERUFUSHIFUTOGATAGASUHODENPANERUNOSEISAKUHO
摘要 PURPOSE:To prevent the accidental erroneous discharge by making sharpe the inclination of the edge section of the electrodes at both end sections of a shift channel through special method while forming a discontinuous section in the dielectric material layer on said edge section thereby leaking the stored wall charge. CONSTITUTION:A conductive film 4 of an acid-resistant Al-Cu alloy is spread on the surface of glass substrates 1, 2 while Cr film 5 of good adhesion is spread on the conductive film 4 in the region of a writing electrode W1 and a terminal shift electrode y2n then an electrode is formed through etching. Here the double structural metal film electrode is etched approximately in perpendicular with the glass substrates 1, 2 while the edge section of the single structure of Al-Cu is tapered when etching. When depositing a dielectric material layer 3 composed of aluninum oxide on them, a crack 11 is formed from the edge section (A) of the write electrode W1 and the terminal electrode y2n into the dielectric material layer 3 while it isn't formed in the shift electrode section. Consequently the wall charge is leaked through the crack 11 to prevent the erroneous discharge due to the shifting of the charge while the deterioration of the discharge characteristic due to the oxidation of the electrode can be prevented.
申请公布号 JPS5736751(A) 申请公布日期 1982.02.27
申请号 JP19800111519 申请日期 1980.08.12
申请人 FUJITSU LTD 发明人 MYASHITA YOSHINORI;SHINODA TSUTAE;SUGIMOTO YOSHIMI;YOSHIKAWA KAZUO
分类号 H01J9/02;H01J11/10;H01J11/12;H01J11/28;H01J11/38 主分类号 H01J9/02
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