VERTICAL MEMORY CELL STRING WITH DIELECTRIC IN A PORTION OF THE BODY

摘要

Some embodiments include a memory cell string having a body having a channel extending therein and in contact with a source/drain, a select gate adjacent to the body, a plurality of access lines adjacent to the body, and a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate. The dielectric in the portion of the body does not extend along an entire length of the body. Other embodiments are described and claimed.

主权项

1. A memory cell string comprising:
a channel formed in contact with a source/drain and under a select gate; and a dielectric formed within a portion of the channel under a portion of the select gate, and extending within the portion of the channel under the portion of the select gate.