| 发明名称 |
Field Effect Transistors and Methods of Forming Same |
| 摘要 |
Semiconductor devices and methods of forming the same are provided. A template layer is formed on a substrate, the template layer having a recess therein. A plurality of nanowires is formed in the recess. A gate stack is formed over the substrate, the gate stack surrounding the plurality of nanowires. |
| 申请公布号 |
US2016276433(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201514659262 |
申请日期 |
2015.03.16 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Holland Martin Christopher;Duriez Blandine;van Dal Mark |
| 分类号 |
H01L29/06;H01L29/66;H01L29/78;H01L27/088;H01L29/423;H01L21/02;H01L21/8252;H01L21/8234;H01L29/20 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming a template layer on a substrate, the template layer having a first recess therein; forming a plurality of first nanowires in the first recess; and forming a first gate stack, the first gate stack surrounding the plurality of first nanowires. |
| 地址 |
Hsin-Chu TW |
