| 摘要 |
PURPOSE:To improve the integration by opening a contacting hole at an interlayer insulating film to expose a semiconductor wiring layer of the second layer, accumulating a conductive material layer in the hole, and connecting the first and second layers through the material layer. CONSTITUTION:A photoresist pattern 6 is formed on wiring layers 2, 4, an insulating film 3 is selectively etched to expose the surface of the polycrystalline silicon wiring layer 4, and boron ions are implanted. The interlayer insulating film 3 is again selectively etched to expose the diffused wiring layer 2 to completely open a contacting hole, the pattern 6 is removed, ion implanted boron is activated as a P type region 7, to form a P-N junction. After a polycrystalline silicon layer 8 is accumulated, phosphorus ions are implanted to the layer 8 to be again thermally annealed, to form an NPN type structure at the end of the layer 4. Thus, the layers 4, 2 are connected through a resistance element to enhance the integration. |
