| 摘要 |
PURPOSE:To laminate a silicon single crystal layer easily as well as speedily, by making ionized vapor particles having a kinetic energy of 1-10<4>eV bombard against a substrate at an incident angle of 0-30 deg. or 75-89 deg. with respect to the normal thereof. CONSTITUTION:Silicon 17 is supplied into a crucible 7, and evacuation is effected through an evacuation port 2 in order to bring the inside of a vacuum chamber 1 under a high vacuum. In addition, power sources 14, 15, 16 are placed therein. Then, while cooling water is being supplied to a water-cooled copper hearth 9, a 180 deg.-deflected electron gun 8 is actuated to heat the silicon 17. The silicon 17 is vaporized to reach a vapor ionizing section 6. As a filament 10 is energized to heat up by means of the power source 15, thermoelectrons are emitted. The thermoelectrons are field-accelerated to collide against the vapor of the silicon 17 thereby to ionize the same to be positively charged. The ionized vapor particles are provided with a kinetic energy of 1-10<4>eV by means of the power source 14 so as to collide against a substrate 5. In this case, the substrate 5 is disposed so that the ionized vapor particles will be made incident on the substrate 5 at an angle of 0-30 deg. or 75-89 deg. with respect to the normal thereof, thereby allowing a single crystal layer to be formed on the surface of the substrate 5. |
