Manufacturing ultra-thin dielectrically isolated wafers

摘要

A method including filling etched moats with a first dielectric layer and layer of polycrystalline material and planarizing. A second dielectric layer is formed on the first polycrystalline layer and a second layer of polycrystalline is formed on the second dielectric layer to form a handle. The starting material is then thinned to produce the dielectric isolated islands. Device forming steps are then performed. Finally, the handle is removed leaving a wafer having a thickness defined by the planarized surface of the first polycrystalline layer and the top surface of the first wafer.