| 摘要 |
The present invention is directed to a method of manufacturing a semiconductor device which comprises the steps of forming an opening portion through a polycide film and an insulating film sequentially formed on a semiconductor substrate of a first conductivity type so as to expose the semiconductor substrate, forming an insulating film on the side surface of the opening portion and the surface of the semiconductor substrate implanting an ion of a second conductivity type into the semiconductor substrate through the insulating film, and forming an insulating side wall in the opening portion. Thus, a metal pollution or the like in the active region due to a metal included in the polycide film can be prevented and a semiconductor device of high performance and high reliability can be manufactured. Also, the present invention is directed to a method of manufacturing a semiconductor device which comprises the steps of laminating two kinds of insulating films on a semiconductor substrate, forming a stepped opening portion for contact composed of a first opening portion through which the semiconductor substrate is exposed and a second opening portion, communicating to the first opening portion, formed by selectively removing only the upper insulating film, and burying a conductor in the stepped opening portion. Therefore, the contact widths can be reduced more and as a consequence, a semiconductor device of high performance and high reliability can be manufactured.
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