| 摘要 |
The method is characterized by (a) depositing a film (2) to be etched on the substrate (1), and (b) depositing photoresist to be etched tiltedly thereon after dipping treatment with a dipping solution. The dipping solution is prepared by diluting the etchant with deionized water with a mixing ratio of 1:10 - 1:100. This method can provide 15≦̸-25≦̸angled patterns and prevent the bad step coverage and short failure caused by breakdown. Thus the product yield and reliability of elements can be improved.
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