发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF |
摘要 |
The semiconductor memory device includes a cylinder whose one part is connected to a region to be filled with impurity and a storage electrode formed by micro pillars interconnected with the cylinder body. The device is characterized by the rugged surface formed on the outer wall of the cylinder.
|
申请公布号 |
KR950011635(B1) |
申请公布日期 |
1995.10.07 |
申请号 |
KR19920005540 |
申请日期 |
1992.04.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN, JU - YONG;SHIM, SANG - PIL;HWANG, CHANG - KYU |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|