发明名称 SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF
摘要 The semiconductor memory device includes a cylinder whose one part is connected to a region to be filled with impurity and a storage electrode formed by micro pillars interconnected with the cylinder body. The device is characterized by the rugged surface formed on the outer wall of the cylinder.
申请公布号 KR950011635(B1) 申请公布日期 1995.10.07
申请号 KR19920005540 申请日期 1992.04.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YUN, JU - YONG;SHIM, SANG - PIL;HWANG, CHANG - KYU
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
代理机构 代理人
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