发明名称 |
Plasma dry cleaning of semiconductor processing chambers |
摘要 |
The plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber. When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be located upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.
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申请公布号 |
US5676759(A) |
申请公布日期 |
1997.10.14 |
申请号 |
US19950442939 |
申请日期 |
1995.05.17 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YE, YAN;RHOADES, CHARLES STEVEN;YIN, GERALD Z. |
分类号 |
C23C14/00;B08B7/00;C23C16/44;H01L21/00;H01L21/302;H01L21/304;H01L21/306;H01L21/3065;(IPC1-7):B08B7/00 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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