发明名称 |
BIPOLAR TRANSISTOR DEVICE WITH EMITTER HAVING TWO TYPES OF EMITTER REGIONS |
摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor device with an emitter having two types of emitter regions.SOLUTION: A bipolar semiconductor device comprises: a semiconductor body 100 having a first surface; and a base region 10 of a first doping type and a first emitter region 20 in the semiconductor body. The first emitter region adjoins the first surface and comprises a plurality of first type emitter regions 21 of a second doping type complementary to the first doping type, a plurality of second type emitter regions 22 of the second doping type, a plurality of third type emitter regions 23 of the first doping type, and a recombination region 24 comprising recombination centers.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016189465(A) |
申请公布日期 |
2016.11.04 |
申请号 |
JP20160061292 |
申请日期 |
2016.03.25 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
CHRISTIAN JAEGER;ROMAN BABURSKE;FRANZ-JOSEF NIEDERNOSTHEIDE;HANS-JOACHIM SCHULZE;ANTONIO VELLEI |
分类号 |
H01L29/739;H01L21/329;H01L21/336;H01L21/8234;H01L27/088;H01L29/12;H01L29/78;H01L29/861;H01L29/868 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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