| 摘要 |
PROBLEM TO BE SOLVED: To obtain a burn-in system which can boost signal frequency, when burn-in is performed on wafer state. SOLUTION: A wafer 116 as a DUT is heated to 125 deg.C by a heater 118 via wafer tray 117. A contactor 114 keeps connection with the wafer 116 and sends a signal from a burn-in substrate 112 to the wafer 116 through a flexible cable 115. At this time, the contactor 114 is heated, but this flexible cable 115 and a heat insulator 113 blocks heat conduction to the burn-in substrate 112. A driver substrate 119, which is kept nearly at room temperature, is positioned near the burn-in substrate 112. A driver 120, mounted on the driver substrate 119, sends a signal to the wafer 116 through a connector 121, the burn-in substrate 112, and the flexible cable 115 by the shortest distance.
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