| 摘要 |
Alkali-developable negative resist compositions containing (1) a film-forming polymer with monomer units containing alkali-soluble groups and monomer units with an alcohol structure which can react with these groups and (2) a light-sensitive acid generator to bring about this reaction and render exposed areas insoluble in aqueous base. A negative resist composition (NRC1) which can be developed with basic solutions (BS), comprising (1) a film-forming polymer which is soluble in BS, containing monomer units (1A) with an alkali-soluble group (Q) and monomer units (1B) with an alcohol structure (Q') capable of reacting with Q and (2) an acid generator which, when exposed to image-forming radiation, decomposes to form an acid which brings about this reaction between Q and Q' or a reaction to protect the group Q. The NRC1 itself is soluble in aqueous base but areas exposed to the radiation are rendered insoluble due to the action of component (2). Independent claims are also included for (a) a method for forming a negative resist pattern by coating a substrate with the above NRC1, selectively exposing the resulting film to radiation which can cause the decomposition of component (2) and then developing the exposed resist with an aqueous basic solution; (b) an NRC composition (NRC2) comprising a base resin consisting of an alkali-soluble polymer, an acid generator as above and (3) an alicyclic alcohol with a reactive site which can undergo a dehydration reaction to form a bond with the polymer in presence of the acid produced; (c) a method as in (a) for forming a negative resist pattern with NRC2, which involves selective exposure, heat-curing and development with aqueous base; (d) an NRC composition (NRC3) comprising a polymer with an alkali-soluble group, a polymer with a side-chain alcohol structure capable of reacting with this group and a photosensitive acid generator as above, functioning as with NRC1; (e) a method for forming a negative resist pattern with NRC3, as described in (a); (f) an NRC composition (NRC4) in which the mol. wt. distribution of the parts rendered insoluble by exposure to light is in the range 1-2; (k) a composition NRC5 (as in c above) in which the base resin contains not more than 10 wt% of components with a mol. wt. of less than 2000; (g) a method for forming a negative resist pattern by coating a substrate with NRC4 or NRC5, exposing selectively and developing with aqueous base; (h) processes for the production of electronic devices using any of the above resist patterns as a mask, to enable the selective removal of the underlying target substrate and the formation of a predetermined functional layer.
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