| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique that can reduce warpage in a wafer by decreasing the film stress of an entire interlayer insulating film. SOLUTION: The interlayer insulating film TH4 between third and fourth layer wiring M3 and M4 is set to the laminated structure film of a TEOS film TH4a formed by the CVD method, an SOG film TH4b formed by applying an SOG film onto the TEOS film TH4a and by performing heat treatment, and a TEOS film TH4c formed on the SOG film TH4b. By making films laminated, the film stress in each film is canceled, and hence the warpage in the wafer is reduced.
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