| 摘要 |
PURPOSE: An apparatus for depositing a silicide layer and a method for preventing generation of particles are provided to prevent the generation of particles by connecting a silane gas supply tube to a process chamber. CONSTITUTION: A process chamber(210) is used for depositing a tungsten silicide layer on a wafer by reacting supplied reaction gases. A gas supply system(220) is connected with the process chamber(210). The gas supply system(220) is used for supplying a reaction gas and an inert gas into an inside of the process chamber(210). A pump(290) is connected with the process chamber(210) by a vacuum tube(295). The pump(290) is used for controlling an internal pressure of the process chamber(210) in order to optimize an internal state of the process chamber(210). The gas supply system(220) is formed with three inert gas supply tubes(230,234,238), a silane gas supply tube(240), a DCS gas supply tube(250), a WF6 gas supply tube(255), and an NF3 gas supply tube(260). A multitude of opening/shutting valve(232,236,239,242,252,256,262), a filter(222), a gas flow controller(224) are installed at each gas supply tube(230,234,238,240,250,255,260).
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