| 摘要 |
The invention includes field effect transistors and methods of forming field effect transistors. In one implementation, a field effect transistor includes a semiconductive channel region and a gate construction operatively proximate the channel region. The gate construction includes a conductive gate region and a gate dielectric region intermediate the channel region and the conductive gate region. The gate dielectric region includes a Ta2O5 comprising layer and a SiO2 comprising layer intermediate the Ta2O5 comprising layer and the channel region. The conductive gate region includes at least two different material layers, with one of the at least two layers comprising a first conductive material and another of the at least two layers comprising a conductive metal nitride which is received intermediate the Ta2O5 comprising layer and the one layer. In one implementation in a field effect transistor gate, the gate dielectric region includes a Ta2O5 comprising layer and a SiO2 comprising layer intermediate the Ta2O5 comprising layer and the conductive gate region. The gate dielectric layer region is substantially void of a SiO2 comprising layer intermediate the Ta2O5 comprising layer and the conductive gate region.
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