| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method by which etching can smoothly be carried out without opening abnormal shaped holes on the surface of an quartz glass substrate. SOLUTION: The substrate is etched by making carbon fluoride gas into a plasma state through discharging under a low pressure and then reacting the active seeds of the generated ions, neutral radicals or the like, with glass substrate materials. Initial etching is carried out by applying a highly biased voltage of 500 V to 900 V to the substrate through the use of a mixture gas of C3 F8 /CF4 as an etching gas, at the early etching stage.
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