| 摘要 |
PURPOSE: A structure of an LED(Light Emitting Diode) chip and a fabricating method thereof are provided to simplify a fabricating process of the LED chip and increase light emitting efficiency by forming a light emitting layer of the LED chip on a surface of a silicon wafer. CONSTITUTION: A silicon wafer is divided into individual devices. An oxide layer is formed by applying predetermined current density on a surface of the divided individual device. The oxide layer is etched by using a mixed solution of HF and CH3CH2OH. A pore of a predetermined size is formed by etching the oxide layer. A light emitting layer is formed by injecting fluoric ions into the pore. A bonding pad pattern is formed on an upper portion of the light emitting layer. A bonding pad layer is formed by using a CVD(Chemical Vapor Deposition) method. A back metal layer is formed on a bottom face of a wafer having the light emitting layer by using the CVD method. |
