DUAL-GATE FLASH MEMORY DEVICE AND ITS MANUFACTURING METHOD

摘要

PURPOSE: A dual-gate flash memory device and its manufacturing method are provided to improve the scaling down characteristic of conventional MOS flash memory devices and memory characteristic. CONSTITUTION: A well-type Fin active region(4) having a width of less than 100nm is formed on a bulk silicon wafer(2b) that do not occur a floating body effect and a thermal conductive problem. A tunneling oxide layer(12) is formed on the sidewall. A floating electrode(32) for storing charges is formed.