发明名称 DEVICE HAVING MULTILAYER OXIDE ARTIFICIAL LATTICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a nano-scaled dielectric material having a high dielectric constant and a high tunability. SOLUTION: A device comprises a substrate, a bottom electrode deposited on the substrate and selectively patterned thereon, a dielectric thin film coated on the bottom electrode and selectively patterned thereon, and a top electrode deposited on the dielectric thin film and patterned thereon. The dielectric thin film is evaporated at a unit lattice thickness. The dielectric thin film is formed by repeatedly depositing at least two dielectric materials having dielectric constants different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257965(A) 申请公布日期 2003.09.12
申请号 JP20020137049 申请日期 2002.05.13
申请人 SUNGKYUNKWAN UNIV 发明人 LEE JAICHAN;KIM JUHO;KIM LEE-JUN;KIM YOUNG SUNG
分类号 H01L27/04;C23C14/08;C23C14/28;H01L21/02;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L29/51;H01L29/78;(IPC1-7):H01L21/316;H01L21/824 主分类号 H01L27/04
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