METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE USING REMAINING RESIST LAYER FOR REDUCING TENSILE STRESS OF LINER NITRIDE LAYER

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent lifting effect in an HDP(High Density Plasma) oxide forming process by reducing the tensile stress of a liner nitride layer using a remaining resist layer. CONSTITUTION: A trench(37) is formed in a semiconductor substrate(31). A sidewall oxide layer(39) is formed along an inner surface of the trench. A liner nitride layer(41) and a liner oxide layer(43a) are sequentially formed along the upper surface of the resultant structure. A resist layer(45) is formed on the entire surface of the resultant structure and left in the trench alone by using etch-back. The liner oxide layer is partially removed therefrom. An HDP oxide is filled in the trench.