发明名称 Apparatus for generating driving voltage for sense amplifier in a memory device
摘要 The apparatus for generating a driving voltage for a sense amplifier has at least voltage output means, and first and second core voltage step-up means. The voltage output means outputs a voltage for driving the sense amplifier to a node. Each of the first and second core voltage step-up means are connected between a power supply and the node. The first and second core voltage step-up means are turned on in sequence to elevate the voltage level of the node connected with the sense amplifier up to the level of the power supply. This enhances the performance of the sense amplifier as well as the execute detection amplification in a short time period. The first and second core voltage step-up means are turned on in sequence to elevate the core voltage as the driving voltage, reducing the power noise. Each core voltage step-up driver may be installed in each bank to reduce power consumption.
申请公布号 US6879197(B2) 申请公布日期 2005.04.12
申请号 US20030699722 申请日期 2003.11.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG CHANG SEOK;KANG SANG HEE
分类号 G11C11/4091;G11C7/06;H03F3/45;H03K3/02;(IPC1-7):H03K3/02 主分类号 G11C11/4091
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