| 摘要 |
PURPOSE:To decrease the current capacity of the pre-step circuit by providing the enhancement-type field effect transistor to the semiconductor circuit which uses the transistor earthed to the emitter for the switching purpose. CONSTITUTION:Drain D of field effect transistor FET is connected to base B of NPN transistor Q, and gate G and source S are connected to collector C and emitter E respectively. In such connection, the transistor given can be used effectively for the switching purpose without increasing the current capacity of the front step. |
