| 摘要 |
PURPOSE:To eliminate the separation of a conductive pattern and the improper characteristics of a semiconductor element by forming the hole of an insulating layer formed at the semiconductor element and contacting hole forming positions narrower than the pattern width of the lower conductor. CONSTITUTION:When the SiO2 layer 6 of the contacting hole forming position of a lower pattern 5 is etched and a window is opened, a hole of an area narrower than the width of the pattern 5 is opened. Thus, it can prevent the etching from advancing to a glass substrate 4, thereby eliminating the separation of the pattern 5 due to the overetching. |
