| 摘要 |
PURPOSE:To obtain an output buffer which is excellent in the propagating characteristic of a signal, highly speedy and has a high driving capacity by enlarging the driving capacity of a transistor connected serially to a memory device in accordance with the sequence of propagation of the signal. CONSTITUTION:At a memory device 11, tri-state inverters 12 and 16 and inverters 13 and 15 are connected, and the output of the memory device 11 is derivated through an inverter Inv 17 for buffering the output to the output edge of the integrated circuit. The inverter 12 is a small driving capacity and the inverter 15 is a middle-sized driving capacity and the Inv 17 is composed of the transistor with a large driving capacity. For such a reason, respective transistors may drive the transistor a little larger than themselves, and therefore, the propagating characteristic of the signal comes to be excellent, and the output buffer, which is highly speedy and has a high driving force, can be obtained.
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