| 摘要 |
PURPOSE:To reduce the contact resistance making the fine and excellent edge shape as well as effective contact diameter larger by a method wherein the second interlayer insulating film is etched to form a shallow incomplete contact hole and then sidewalls of insulating film is formed on the inner walls of the contact hole to etch the first interlayer insulating film for completing the incomplete contact hole. CONSTITUTION:The first interlayer insulating film 4 and the second interlayer insulating film 5 are laminatedly formed on a lower layer structure and the the second interlayer insulating film 5 as the upper interlayer insulating film is etched using a resist pattern 7 as a mask to form a shallow incomplete contact hole 8. Next, after removing the resist pattern 7, a sidewall forming insulating film 9 is formed on the second interlayer insulating film including the incomplete contact hole 8 while the overall insulating film 9 is anisotropically etched to be left as sidewalls 9a only on the inner walls of incomplete contact hole 8. Finally, the first interlayer insulating film 4 exposed to the incomplete contact hole 8 is etched to complete the same 8.
|
