| 摘要 |
Adduct of the formula H3GaNR3 wherein each R is independently selected from lower alkyl groups having at least 2 carbon atoms, and a process for depositing gallium nitride, gallium arsenide, or gallium phosphide films, using the above adduct as a source of nitride (for the nitride film) and gallium. Arsenic and phosphorus compounds can also be added for deposition gallium compounds of those elements. The process can also be performed using the analogous trimethylamine adduct. |
