PROCESS ADAPTED TO THE MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

The method is for improving characteristics of the gate oxidized layer of a MOS transistor. The method comprises 1st process for etching the nitrated mask after growing the field oxidized layer, 2nd process for etching the gate oxidized layer, 3rd process for removing the nitrated component remained on the surface of silicon wafer by phosphoric acid processing, and 4th process for growing the gate oxidized layer under the oxide circumstance.