发明名称 |
Element joining pad for semiconductor device mounting board. |
摘要 |
<p>An element joining pad for a semiconductor device mounting board includes a thick-film metalized layer, a barrier layer, and a Ni plating layer. The thick-film metalized layer is selectively formed on a low-temperature sintered board and consists of one of a metal and an alloy which can be sintered at 500 DEG C or more and 1,200 DEG C or less. The barrier layer is formed on the thick-film metalized layer and constituted by one of a Rh plating layer and a Ru plating layer. The Ni plating layer is formed on the barrier layer. <IMAGE></p> |
申请公布号 |
EP0660404(A2) |
申请公布日期 |
1995.06.28 |
申请号 |
EP19940120431 |
申请日期 |
1994.12.22 |
申请人 |
NEC CORPORATION |
发明人 |
SHIBUYA, AKINOBU;KIMURA, MITSURU |
分类号 |
H01L23/12;H01L23/498;H05K3/24;(IPC1-7):H01L23/498 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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