发明名称 Sputter deposition process
摘要 Magnetron cathode reactive sputtering of oxides and nitrides of bismuth, tin, gallium, and their alloys is significantly enhanced by melting the metal and reactively sputtering the molten metal, continuously removing from the sputtering surface of the molten metal oxides or nitrides formed on the sputtering surface, and moving the oxides or nitrides to an area or place outside of or removed from the sputtering plasma zone. The metal sputtering surface is thereby maintained in a clean condition to reduce the potential for arcing and to substantially increase the rate of sputtering of the metal. Sputter deposition rates and the speed of production of compound coated substrates are thereby increased several fold.
申请公布号 US5507931(A) 申请公布日期 1996.04.16
申请号 US19950394353 申请日期 1995.02.24
申请人 DEPOSITION TECHNOLOGIES, INC. 发明人 YANG, PETER Y.
分类号 C23C14/00;C23C14/08;C23C14/35;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/00
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