Crucible for preparing compound semiconductor crystal

摘要

A method of preparing a compound semiconductor crystal in a crucible involves first forming a boron or boron compound containing layer on an inner surface of the crucible and heat treating the same to form a B2O3 containing layer. The resulting preheated crucible is then employed for preparing the compound semiconductor crystal. By pretreating the crucible in this manner, it is possible to previously form a homogenous B2O3 film on the crucible interior surface while preventing incomplete and heterogeneous coating of the B2O3 film. Consequently, it is possible to prevent a raw material melt from wetting the crucible interior surface and thus to suppress polycrystallization, thereby preparing a compound semiconductor single crystal with an excellent yield.