发明名称 |
Non-volatile semiconductor memory device and method of manufacturing the same |
摘要 |
A tunnel oxide film is formed on the surface of a p-type silicon substrate, and a floating gate electrode made from a polysilicon film is formed on the surface of the tunnel oxide film. On the surface of the floating gate electrode, a control gate electrode is formed via an NON film formed by sequentially stacking a silicon nitride film, a silicon oxide film, and a silicon nitride film. A side oxide film is formed on the side surfaces of the floating gate electrode and the control gate electrode. Source and drain regions made from an n-type diffused layer are formed on the surfaces of element regions of the silicon substrate on the two sides of the floating gate electrodes.
|
申请公布号 |
US5661056(A) |
申请公布日期 |
1997.08.26 |
申请号 |
US19950533169 |
申请日期 |
1995.09.25 |
申请人 |
NKK CORPORATION;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
TAKEUCHI, NOBUYOSHI |
分类号 |
H01L21/28;H01L21/318;H01L21/8247;H01L27/115;H01L29/423;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|