发明名称 |
HEAT TREATMENT DEVICE |
摘要 |
To give a predetermined heat treatment to a wafer (W) held on a holder (14) for a wafer to be treated in a treatment container (4) of a wafer heat treatment device, lower and upper heating means (16, 26) are disposed below and above the holder (14) for a wafer to be treated for heating the wafer to be treated. These heating means (16, 29) are mounted in lower and upper side heating means containers (6, 8), respectively. A gas supply means (28) is provided between the upper side heating means (8) and the holder (14) for a wafer to be treated for supplying treatment gas in a shower-like fashion. The uniformity of temperatures in the surfaces of the wafer can be improved by heating the wafer (W) from the upper and lower sides of the wafer (W).
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申请公布号 |
WO9731389(A1) |
申请公布日期 |
1997.08.28 |
申请号 |
WO1997JP00477 |
申请日期 |
1997.02.21 |
申请人 |
TOKYO ELECTRON LIMITED;OHKASE, WATARU;AOKI, KAZUTSUGU;HASEI, MASAAKI |
发明人 |
OHKASE, WATARU;AOKI, KAZUTSUGU;HASEI, MASAAKI |
分类号 |
H01L21/00;(IPC1-7):H01L21/205;H01L21/22;H01L21/31;H01L21/324 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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