发明名称 HEAT TREATMENT DEVICE
摘要 To give a predetermined heat treatment to a wafer (W) held on a holder (14) for a wafer to be treated in a treatment container (4) of a wafer heat treatment device, lower and upper heating means (16, 26) are disposed below and above the holder (14) for a wafer to be treated for heating the wafer to be treated. These heating means (16, 29) are mounted in lower and upper side heating means containers (6, 8), respectively. A gas supply means (28) is provided between the upper side heating means (8) and the holder (14) for a wafer to be treated for supplying treatment gas in a shower-like fashion. The uniformity of temperatures in the surfaces of the wafer can be improved by heating the wafer (W) from the upper and lower sides of the wafer (W).
申请公布号 WO9731389(A1) 申请公布日期 1997.08.28
申请号 WO1997JP00477 申请日期 1997.02.21
申请人 TOKYO ELECTRON LIMITED;OHKASE, WATARU;AOKI, KAZUTSUGU;HASEI, MASAAKI 发明人 OHKASE, WATARU;AOKI, KAZUTSUGU;HASEI, MASAAKI
分类号 H01L21/00;(IPC1-7):H01L21/205;H01L21/22;H01L21/31;H01L21/324 主分类号 H01L21/00
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