| 发明名称 |
HYBRID SYNTHETIC ANTIFERROMAGNETIC LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION (MTJ) |
| 摘要 |
A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers. |
| 申请公布号 |
US2016276581(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201615169603 |
申请日期 |
2016.05.31 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
PARK Chando;LEE Kangho;KANG Seung Hyuk |
| 分类号 |
H01L43/10;G11C11/16;H01L43/02;H01L43/12;H01L43/08 |
主分类号 |
H01L43/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a magnetic tunnel junction (MTJ) device, comprising:
depositing a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant; depositing a SAF coupling layer on the first SAF multilayer; depositing a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant; depositing a barrier layer on the second SAF multilayer; and depositing a free layer on the barrier layer. |
| 地址 |
San Diego CA US |
