| 摘要 |
A thin film transistor and a fabrication method thereof in which a desired device characteristic is achieved by adjusting the lengths of a channel region and an offset region. The transistor includes a substrate in which a trench is formed, a gate electrode formed in one side in the interior of the trench, a gate insulation film formed in the substrate including the gate electrode, an active layer formed on the gate insulation film, and impurity regions formed on the active layer corresponding to the substrate. The length of the channel and offset regions are adjusted by adjusting the length and width of the trench within the substrate.
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