METHOD FOR FORMING SELF-ALIGNED CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A self-aligned contact hole formation method of semiconductor devices is provided to prevent an exposing of conductive lines at sidewalls of a contact hole due to a misalignment. CONSTITUTION: After forming a plurality of conductive lines(43) on a substrate(40), an insulating spacer(45) and a mask insulator(44) are sequentially formed at both sidewalls and top surface of the conductive lines(43). An interlayer dielectric(46) made of PE-TEOS(Plasma Enhanced-tetraethyl ortho silicon) is formed so as to form a slit void between the conductive lines. After exposing the slit void in a non-contact region, the PE-TEOS layer(46) remaining in the non-contact region is removed, so that the slit void formed between the conductive lines is expanded(C').